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| 2SC4416 Silicon NPN Epitaxial Application UHF Frequency conversion, Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector 2SC4416 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain I EBO VCE(sat) hFE Cob fT CG Min 25 -- -- -- -- 50 -- 3.0 15 Typ -- -- -- -- -- -- 0.85 3.8 19 Max -- 0.1 10 0.3 0.3 180 1.3 -- -- pF GHz dB Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCB = 13 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 0.8 mA, f in = 900 MHz, f OSC = 930 MHz (-5dBm), f out = 30 MHz Noise figure Note: Marking is "XB-". NF -- 8 1.2 dB 2 2SC4416 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 200 VCE = 5 V 160 100 120 80 50 40 0 0 50 100 150 Ambient Temperature Ta (C) 1 2 5 10 20 Collector Current IC (mA) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 5 Gain Bandwidth Product fT (GHz) VCE = 5 V 4 1.2 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 1.1 3 1.0 2 0.9 1 0.8 0 1 2 5 10 20 Collector Current IC (mA) 50 0.7 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC4416 Conversion Gain and Noise Figure vs. Supply Voltage 25 IC = 0.8 mA f = 900 MHz Conversion Gain CG (dB) Noise Figure NF (dB) Conversion Gain CG (dB) Noise Figure NF (dB) 20 CG 20 25 VCC = 3 V f = 900 MHz CG Conversion Gain and Noise Figure vs. Collector Current 15 15 NF 10 10 NF 5 fout = 30 MHz fosc = 930 MHz(-5 dBm) 0 1 2 5 Supply Voltage VCC (V) 10 5 fout = 30 MHz fosc = 930 MHz(-5 dBm) 0 0.1 0.2 0.5 1.0 2 Collector Current IC (mA) 5 Conversion Gain and Noise Figure vs. Collector Current 25 VCC = 5 V f = 900 MHz Conversion Gain CG (dB) Noise Figure NF (dB) 20 CG 15 NF 10 5 fout = 30 MHz fosc = 930 MHz(-5 dBm) 0 0.1 0.2 0.5 1.0 2 Collector Current IC (mA) 5 4 2SC4416 S Parameters (Emitter Common) Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP) , ZO = 50 IC = 5 mA IC = 10 mA S11-Frequency 0.8 0.6 0.4 3 0.2 4 5 10 0 0.2 0.4 0.6 0.8 1 1.5 2 3 45 10 -10 -0.2 -5 -4 -3 -0.4 -2 -0.6 -0.8 -1 -1.5 -120 -180 150 1 1.5 2 120 S21-Frequency 90 Scale : 2.5/div 60 30 0 -150 -30 -60 -90 S12-Frequency 90 120 Scale : 0.4/div 60 0.4 0.6 S22-Frequency 0.8 1 1.5 2 3 150 30 0.2 4 5 10 -180 0 0 0.2 0.4 0.6 0.8 1 1.5 2 3 45 10 -10 -0.2 -150 -30 -0.4 -2 -120 -90 -60 -0.6 -0.8 -1 -1.5 -5 -4 -3 5 2SC4416 S Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.777 0.636 0.540 0.494 0.468 0.452 0.439 0.437 0.428 0.429 ANG. -47.6 -82.6 -107.9 -125.0 -138.0 -147.7 -155.4 -162.0 -167.9 -173.8 S21 MAG. 12.318 9.212 6.901 5.480 4.547 3.859 3.374 2.982 2.691 2.457 ANG. 146.4 124.5 110.6 101.6 94.5 89.0 84.2 80.0 76.1 72.5 S12 MAG. 0.037 0.058 0.071 0.079 0.087 0.095 0.103 0.112 0.122 0.131 ANG. 66.8 55.3 51.0 50.7 52.0 53.7 55.7 57.5 59.6 61.2 S22 MAG. 0.878 0.702 0.586 0.520 0.480 0.452 0.436 0.427 0.419 0.415 ANG. -20.1 -30.7 -34.8 -36.4 -37.2 -38.4 -39.9 -41.3 -43.4 -45.0 Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.627 0.492 0.432 0.411 0.395 0.394 0.392 0.390 0.388 0.387 ANG. -64.8 -102.5 -125.3 -139.4 -150.3 -157.4 -163.5 -168.7 -173.1 -177.0 S21 MAG. 17.938 11.621 8.190 6.332 5.168 4.350 3.784 3.333 2.995 2.731 ANG. 135.2 113.8 102.4 95.1 89.5 84.8 80.9 77.1 73.8 70.5 S12 MAG. 0.032 0.047 0.058 0.069 0.079 0.090 0.102 0.113 0.127 0.138 ANG. 63.2 56.4 57.2 59.6 61.7 63.7 65.2 66.5 67.3 67.9 S22 MAG. 0.766 0.560 0.460 0.412 0.385 0.366 0.356 0.351 0.347 0.345 ANG. -27.4 -35.3 -36.1 -36.2 -36.2 -36.8 -38.3 -39.7 -41.6 -43.5 6 2SC4416 Y Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 2.182 4.596 8.314 12.329 16.310 19.817 22.727 25.355 27.058 28.966 IMAG. 5.286 9.838 13.395 15.566 16.548 16.562 15.707 14.778 13.073 11.370 Yfe (mS) REAL 149.226 138.489 121.525 103.171 83.990 66.015 49.791 36.105 23.869 13.481 IMAG. -28.448 -53.561 -74.164 -87.811 -97.188 -100.594 -101.015 -98.928 -95.428 -92.170 Yre (mS) REAL -0.004 -0.005 -0.025 -0.044 -0.068 -0.104 -0.136 -0.165 -0.192 -0.260 IMAG. -0.459 -0.941 -1.460 -1.955 -2.451 -2.958 -3.433 -3.943 -4.438 -4.944 Yoe (mS) REAL 0.069 0.137 0.086 0.111 0.080 0.154 0.226 0.246 0.307 0.328 IMAG. 0.745 1.465 2.251 3.025 3.813 4.618 5.461 6.241 7.067 7.902 Test Condition VCE = 5 V, IC = 10 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 4.137 7.995 12.296 15.691 18.471 20.418 21.855 23.059 23.687 24.366 IMAG. 6.218 10.306 12.125 12.521 12.026 11.618 10.887 10.127 9.375 8.807 Yfe (mS) REAL 246.938 193.805 140.844 100.830 70.237 48.828 33.158 20.494 11.528 4.277 IMAG. -82.680 -128.092 -144.955 -145.272 -139.959 -130.672 -121.649 -112.454 -103.839 -96.921 Yre (mS) REAL -0.004 -0.015 -0.027 -0.024 -0.049 -0.032 -0.024 -0.017 -0.013 -0.013 IMAG. -0.462 -0.937 -1.432 -1.913 -2.396 -2.894 -3.394 -3.889 -4.418 -4.905 Yoe (mS) REAL 0.139 0.220 0.322 0.404 0.410 0.492 0.474 0.502 0.446 0.471 IMAG. 0.754 1.578 2.338 3.028 3.817 4.460 5.196 5.950 6.699 7.486 7 2SC4416 Conversion Gain and Noise Figure Test Circuit VTin 1k fosc = 930 MHz (-5 dBm) 2.2 n 1k L1 L2 8p 2.2 n D1 L3 100 fin = 900 MHz 220 fout = 30 MHz RL = 50 100 p 100 p VBB 2.2 n 2.2 n VCC 47 p D1 47 k 2.2 n Unit R : C: F L: H D1 : 1SV188 10 10 10 L2 : 1 mm Enameled Copper Wire. 15 30 10 10 L3 : 1 mm Enameled Copper Wire. 25 10 L1 : 1 mm Enameled Copper Wire. L4 : Inside Dia 3 mm, 0.5 mm Enameled Copper Wire 1 Turn. L5 : Inside Dia 5 mm Bobin, 0.2 mm Enameled Copper Wire 20 Turns Using Ferrite Core. , , 25 VTout Unit : mm 8 Unit: mm 0.65 0.10 3 - 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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